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| TP2314A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 (CE) DESCRIPTION: The TP2314A is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications,With Emitter Grounded to Case. MAXIMUM RATINGS I V PDISS TJ T STG JC 400 mA 16 V 5.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 35 C/W O 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO ICBO BV EBO hFE Cob GPE IC = 50 mA IC = 50 mA IC = 50 mA VCB = 15 V IE = 1.0 mA VCE = 5.0 V TC = 25 OC TEST CONDITIONS MINIMUM 16 36 36 TYPICAL MAXIMUM UNITS V V V 1.0 4.0 IC = 50 mA f = 1.0 MHz Pout = 1.0 W f = 175 MHz 6.0 50 20 200 15 mA V --pF dB % VCB = 12.5 V VCC = 6.0 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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